IRL640A
Manufacturer:
On Semiconductor
Mfr.Part #:
IRL640A
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 110 W 200 V Continuous Drain Current (ID):18 A 56 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.67 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 180 mΩ |
| Height | 16.3 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 1.8 g |
| Number of Elements | 1 |
| Current Rating | 18 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 1.705 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 180 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 46 ns |
| Element Configuration | Single |
| Rise Time | 8 ns |
| Gate Charge | 56 nC |
| Drain to Source Resistance | 180 mΩ |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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